击穿电压超过1kv的Ga2O3场镀肖特基势垒二极管

2016 74th Annual Device Research Conference (DRC) Pub Date : 2016-06-19 DOI:10.1109/DRC.2016.7676205

K. Konishi, K. Goto, Q. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, S. Yamakoshi, M. Higashiwaki

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引用次数: 2

摘要

我们成功地制造了hpe生长的Ga2O3 fp - sbd，其Vbr超过1 kV。这是研究和开发Ga2O3功率器件走向实际应用和未来商业化的重要一步。这项工作得到了科学、技术和创新委员会(CSTI)、跨部门战略创新促进计划(SIP)、“下一代电力电子”(资助机构:NEDO)的部分支持。

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Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

We succeeded in fabricating HVPE-grown Ga₂O₃ FP-SBDs with a record V_br of over 1 kV. This is an important step in the research and development of Ga₂O₃ power devices toward practical applications and future commercialization. This work was partially supported by Council for Science, Technology, and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), "Next-generation power electronics" (funding agency: NEDO).

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2016 74th Annual Device Research Conference (DRC)

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