{"title":"基于XFAB-XT018技术的弱反转超低电流运算放大器的设计、制造和特性研究","authors":"Farzin Akbar, Marco Ramsbeck, Elias Kogel","doi":"10.1109/S3S.2016.7804392","DOIUrl":null,"url":null,"abstract":"A 1.8V, 932 nA, rail-to-rail CMOS operational amplifier operating in the weak inversion regime in order to amplify the output signal of an air pressure sensor is presented. The two main parts of the ASIC are the beta-multiplier current source and the two stage amplifier. The layout has been drawn considering the matching techniques and the chip was fabricated and further characterized and measured.","PeriodicalId":145660,"journal":{"name":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design, fabrication, and characterization of ultralow current operational-amplifier in the weak inversion mode in XFAB-XT018 technology\",\"authors\":\"Farzin Akbar, Marco Ramsbeck, Elias Kogel\",\"doi\":\"10.1109/S3S.2016.7804392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.8V, 932 nA, rail-to-rail CMOS operational amplifier operating in the weak inversion regime in order to amplify the output signal of an air pressure sensor is presented. The two main parts of the ASIC are the beta-multiplier current source and the two stage amplifier. The layout has been drawn considering the matching techniques and the chip was fabricated and further characterized and measured.\",\"PeriodicalId\":145660,\"journal\":{\"name\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2016.7804392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2016.7804392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design, fabrication, and characterization of ultralow current operational-amplifier in the weak inversion mode in XFAB-XT018 technology
A 1.8V, 932 nA, rail-to-rail CMOS operational amplifier operating in the weak inversion regime in order to amplify the output signal of an air pressure sensor is presented. The two main parts of the ASIC are the beta-multiplier current source and the two stage amplifier. The layout has been drawn considering the matching techniques and the chip was fabricated and further characterized and measured.