红外光源非线性增益系数的测定

Proceedings of LFNM'2000. 2nd International Workshop on Laser and Fiber-Optical Networks Modeling (Cat. No.00EX419) Pub Date : 2000-05-23 DOI:10.1109/LFNM.2000.854040

V. Lysak, I. Sukhoivanov

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引用次数: 0

摘要

分析了电子浓度对半导体激光器光学增益的影响。利用集成增益模型和逼近模型对50 ~ 1000 /spl的有源层厚度变化范围进行了比较。确定了近似模型参数随活动层厚度变化的表达式。

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Determination of nonlinear gain coefficients for infrared optical sources

The influence of electron concentration on optical gain of a semiconductor lasers is analyzed. The comparison by an integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameter change from the active layer thickness is determined.

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Proceedings of LFNM'2000. 2nd International Workshop on Laser and Fiber-Optical Networks Modeling (Cat. No.00EX419)

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