用化学机械抛光贵金属的埋氧屏障堆叠电容器集成

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934535

R. Schnabel, G. Beitel, P. Bosk, C. Dehm, A. Hauser, I. Kasko, G. Mainka, T. Mikolajick, H.D. Mullegger, N. Nagel, M. Rohner, S. Poppa, C. Sama, U. Scheler, V. Weinrich

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引用次数: 0

摘要

提出了一种叠电容器电极与扩散势垒形成的集成方案。该概念利用贵金属的化学机械抛光，并允许介电屏障的集成。电学数据显示，与使用RIE的标准集成相比，接触电阻的参数成品率非常好。根据所提供的数据，可以推导出各种新材料的新集成方案。

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Stack capacitor integration with buried oxygen barrier using chemical mechanical polishing of noble metals

A novel integration scheme for the formation of stack capacitor electrodes and diffusion barriers is presented. The concept makes use of chemical mechanical polishing of noble metals and allows the integration of a dielectric barrier. Electrical data is presented showing excellent parametric yield of contact resistance comparable to standard integration using RIE. Based on the data presented, a variety of new integration schemes for new materials can be deducted.

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2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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