ITO薄膜的光学和电学性质

2018 IEEE 3rd International Conference on Intelligent Energy and Power Systems (IEPS) Pub Date : 2018-09-01 DOI:10.1109/IEPS.2018.8559557

A. Khrypunova, D. Kudii, I. Khrypunova

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引用次数: 1

摘要

ITO薄膜在有效的CdS/CdTe基基太阳能电池设计中实现的优化允许建立，在衬底温度400°C下沉积的层的最大性能值($8,0 \cdot$ 10-4欧姆-1)具有特征。顶层主电荷载流子迁移率$\mu$=44 cm2/($\lt p\gt V \cdot$ s)和异质体系ITO/Poly在可见光范围内的最大透过率$T_{400-800}=0.61$保证了层的光学和电学性能的优化。

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The Optical and Electrical Properties ITO Thin Film

The fulfilled optimization of ITO films for their using in the effective CdS/CdTe base solar cell design allowed to establish, that maximum figure of merit ($8,0 \cdot$ 10-4 ohm-1) is characteristic for the layers deposited at the substrate temperature 400°C. The optimization of the layer optical and electrical properties is ensured by the top main charge carrier mobility $\mu$=44 cm2/($\lt p\gt V \cdot$ s) and the maximum transmittance of heterosystem ITO/Poly in the visible range $T_{400-800}=0.61$.

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2018 IEEE 3rd International Conference on Intelligent Energy and Power Systems (IEPS)

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