T. Gabara, K. Tai, M. Lau, S. Pei, R. Frye, P. Sullivan
{"title":"工作频率为1.2 GHz的27mw CMOS RF振荡器","authors":"T. Gabara, K. Tai, M. Lau, S. Pei, R. Frye, P. Sullivan","doi":"10.1109/MCMC.1994.292533","DOIUrl":null,"url":null,"abstract":"A low power dissipation oscillator circuit in CMOS has been fabricated. The circuit uses inductors and capacitors to form a tank circuit while cross-coupled MOS devices provide the positive feedback to sustain oscillations. The inductors are formed on glass and are solder bumped to the die. The measured power dissipation is 1/10 of the simulated CV/sup 2/F generated by conventional means.<<ETX>>","PeriodicalId":292463,"journal":{"name":"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 27 mW CMOS RF oscillator operating at 1.2 GHz\",\"authors\":\"T. Gabara, K. Tai, M. Lau, S. Pei, R. Frye, P. Sullivan\",\"doi\":\"10.1109/MCMC.1994.292533\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power dissipation oscillator circuit in CMOS has been fabricated. The circuit uses inductors and capacitors to form a tank circuit while cross-coupled MOS devices provide the positive feedback to sustain oscillations. The inductors are formed on glass and are solder bumped to the die. The measured power dissipation is 1/10 of the simulated CV/sup 2/F generated by conventional means.<<ETX>>\",\"PeriodicalId\":292463,\"journal\":{\"name\":\"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1994.292533\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Multi-Chip Module Conference (MCMC-94)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1994.292533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low power dissipation oscillator circuit in CMOS has been fabricated. The circuit uses inductors and capacitors to form a tank circuit while cross-coupled MOS devices provide the positive feedback to sustain oscillations. The inductors are formed on glass and are solder bumped to the die. The measured power dissipation is 1/10 of the simulated CV/sup 2/F generated by conventional means.<>