完全集成的单电感多输出(SIMO) DC-DC转换器在CMOS 65纳米技术

A. J. Soto, E. Lindstrom, A. Oliva, P. Mandolesi, F. Dualibe
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引用次数: 5

摘要

在纳米技术中,片上电源管理设计策略作为片上系统(SoC)的一部分变得极其重要。这项工作提出了一个完全集成的CMOS 65纳米技术的SIMO转换器。由于无源元件也是集成的,因此它们的值应该相对较小,转换器工作在200兆赫的开关频率下。这个版本计数与升压和降压输出,但它可以很容易地扩展到更多的输出。结合系统仿真结果,讨论了适用于高速纳米工艺的控制策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology
In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.
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