{"title":"一种基于有效方法的mmi1530 / 1565nm波分解复用器的新设计","authors":"S. Triki, M. Najjar, H. Rezig","doi":"10.1109/ICTONMW.2008.4773055","DOIUrl":null,"url":null,"abstract":"In this paper, we designed a novel 1times2 1530/1565 nm wavelength division demultiplexer based on silicon-on-insulator (SOI) substrate. Our model is based on MMI region with a tilted facet. Tuning the angle of the tilted MMI facet, can adjust the output wavelength, power ratio and polarization deviations. The simulations of the designed structure show that the insertion loss is -0.58 dB and -0.23 dB for 1530 nm and 1565 nm respectively and the extinction ratio is -3.42 and -13.86 dB. These results are obtained for component length 14.175 mm and width 30 mum.","PeriodicalId":298995,"journal":{"name":"2008 2nd ICTON Mediterranean Winter","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel design of MMI 1530/1565 nm wavelength division demultiplexer based on effective method\",\"authors\":\"S. Triki, M. Najjar, H. Rezig\",\"doi\":\"10.1109/ICTONMW.2008.4773055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we designed a novel 1times2 1530/1565 nm wavelength division demultiplexer based on silicon-on-insulator (SOI) substrate. Our model is based on MMI region with a tilted facet. Tuning the angle of the tilted MMI facet, can adjust the output wavelength, power ratio and polarization deviations. The simulations of the designed structure show that the insertion loss is -0.58 dB and -0.23 dB for 1530 nm and 1565 nm respectively and the extinction ratio is -3.42 and -13.86 dB. These results are obtained for component length 14.175 mm and width 30 mum.\",\"PeriodicalId\":298995,\"journal\":{\"name\":\"2008 2nd ICTON Mediterranean Winter\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 2nd ICTON Mediterranean Winter\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTONMW.2008.4773055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 2nd ICTON Mediterranean Winter","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTONMW.2008.4773055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel design of MMI 1530/1565 nm wavelength division demultiplexer based on effective method
In this paper, we designed a novel 1times2 1530/1565 nm wavelength division demultiplexer based on silicon-on-insulator (SOI) substrate. Our model is based on MMI region with a tilted facet. Tuning the angle of the tilted MMI facet, can adjust the output wavelength, power ratio and polarization deviations. The simulations of the designed structure show that the insertion loss is -0.58 dB and -0.23 dB for 1530 nm and 1565 nm respectively and the extinction ratio is -3.42 and -13.86 dB. These results are obtained for component length 14.175 mm and width 30 mum.
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