浮栅EEPROM电池的总剂量辐射硬度研究

[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI:10.1109/NVMT.1993.696956

D. Wellekens, G. Groeseneken, J. van Houdt, H. Maes

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引用次数: 2

摘要

本文比较了单、双多晶硅浮栅EEPROM电池的总剂量辐射响应。虽然双多晶硅电池的硬度被限制在几千千克，但只有一层多晶硅的设备显示出更强的抗辐射能力。提出了一个模型，能够解释这两种类型的细胞的不同行为，并给出了指导方针，以提高细胞的辐射硬度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On The Total Dose Radiation Hardness Of Floating Gate EEPROM Cells

In this paper the total dose radiation response of single and double polysilicon floating gate EEPROM cells is compared. While the hardness of double polysilicon cells is restricted to a few kilorads, devices having only one polysilicon layer are shown to be much more radiation-hard. A model is presented, that is able to explain the different behaviour of both types of cells and guidelines are given to improve the radiation hardness of the cells.

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[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review

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