一种三维多通道器件的移动度提取方法

ESSDERC 2008 - 38th European Solid-State Device Research Conference Pub Date : 2008-11-18 DOI:10.1109/ESSDERC.2008.4681740

C. Dupré, T. Ernst, É. Bernard, B. Guillaumot, N. Vulliet, P. Coronel, T. Skotnicki, S. Cristoloveanu, G. Ghibaudo, S. Deleonibus

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引用次数: 2

摘要

提出了一种新的参数提取方法来解离高性能多通道CMOS低待机功耗结构中各通道的电流贡献。实验结果表明，尽管GAA迁移率降低有限，但每种类型的通道都具有良好的短通道迁移率值，从而获得了非常高的离子/IOFF比(16 pA/mum的NMOS为2.27 mA/mum, PMOS为1.32 mA/mum)。

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A mobility extraction method for 3D multichannel devices

A novel parameter extraction method is proposed to dissociate the current contributions of each channel of highly performing Multi-Channel CMOS Low Standby Power architecture. It is shown that the very high ION/IOFF ratio (NMOS: 2.27 mA/mum for 16 pA/mum PMOS 1.32 mA/mum for 16 pA/mum) obtained experimentally benefits from good short-channel mobility values of each type of channel despite a limited degradation of the GAA mobility value.

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ESSDERC 2008 - 38th European Solid-State Device Research Conference

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