基于SiGe BiCMOS的高集成单芯片5-6 GHz前端IC，增强802.11ac WLAN无线电前端设计

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2015-05-17 DOI:10.1109/RFIC.2015.7337746

C. Huang, Kenny Christainsen, S. Nabokin, Rafik Mirzayantz, J. Allum, Andrew Chen, L. Lam, M. McPartlin, M. Doherty, Bill Vaillancourt

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引用次数: 15

摘要

提出了一种基于SiGe BiCMOS的高集成度4.9-5.9 GHz单芯片前端IC (FEIC)，其芯片面积为1.6 mm2，封装尺寸为1.7 × 2.0 × 0.33 mm3。Tx链具有> 30db增益，满足- 40db DEVM到15dbm的Pout和- 35db DEVM到17dbm的Pout, 3.3 V电源，对调制带宽和占空比不敏感。超低回退DEVM支持新兴的1024-QAM应用程序。集成的测井检测器提高了发射功率控制的动态范围。Rx链具有< 2.8 dB NF和15db增益，3dbm IIP3和10db旁路衰减，23dbm IIP3。所有这些独特的功能增强了基于802.11ac标准的复杂无线电的前端电路设计。

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A highly integrated single chip 5–6 GHz front-end IC based on SiGe BiCMOS that enhances 802.11ac WLAN radio front-end designs

A highly integrated 4.9-5.9 GHz single chip front-end IC (FEIC) is presented, which is based on SiGe BiCMOS, realized in a 1.6 mm2 chip area and in an ultra-compact 1.7 × 2.0 × 0.33 mm3 package. The Tx chain has >30 dB gain and meets -40 dB DEVM up to Pout of 15 dBm and -35 dB DEVM up to Pout of 17 dBm with a 3.3 V supply, insensitive to modulation bandwidths and duty cycle. The ultra-low back-off DEVM enables the emerging 1024-QAM applications. The integrated log detector enhances the dynamic range for the transmit power control. The Rx chain features <;2.8 dB NF and 15 dB gain with 3 dBm IIP3 and 10 dB bypass attenuator with 23 dBm IIP3. All the unique features enhance the front-end circuit designs of complex radios based on the 802.11ac standard.

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2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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