采用两步法制备SiGe/Si非均相纳米结构

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638102

Bi Zhou, S. Pan, Songyan Chen, Cheng Li, H. Lai, Jinzhong Yu, Xianfang Zhu

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引用次数: 0

摘要

采用电化学阳极氧化法制备了SiGe/Si非均相纳米结构。对材料的结构和光学性能进行了表征。讨论了非均相纳米结构在室温下产生光致发光的原因。

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Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy

SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.

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2008 5th IEEE International Conference on Group IV Photonics

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