采用0.18um SiGe BiCMOS工艺，功率为12.1 dBm, P1dBCP的60GHz功率放大器

2013 International SoC Design Conference (ISOCC) Pub Date : 2013-11-01 DOI:10.1109/ISOCC.2013.6863955

W. M. Lim, J. Gu, Jialin Feng, K. Yeo, Xiaopeng Yu, L. Siek, K. M. Lim, C. Boon, Wanlan Yang, Jinna Yan

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引用次数: 1

摘要

本文介绍了一种四级60GHz SiGe BiCMOS功率放大器的设计与分析。所提出的电路采用单端共发射极拓扑结构，从1.8V电源中吸取72mW。它能够提供12.1dBm输出，17.4dB功率增益，压缩点峰值PAE为14.1%。S21拥有从55GHz到67GHz的3dB带宽，覆盖了整个60GHz频段。该功率放大器的硅面积为1.1 × 0.46 um2，测量结果表明，该功率放大器完全适用于60GHz ISM频段的应用。

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A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 × 0.46 um2 and the measured results show that it can be fully adopted in the 60GHz ISM band applications.

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2013 International SoC Design Conference (ISOCC)

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