3ghz双极差动压控振荡器的相位噪声分析与设计

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541642

Xiaoyan Wang, A. Fard, P. Andreani

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引用次数: 17

摘要

本文提出了一种低相位噪声差分双极柯氏压控振荡器，以0.35/spl mu/m的BiCMOS工艺实现。时变相位噪声分析为1/f/sup / 2/相位噪声区域的主要噪声源提供了封闭形式的符号表达式。测量结果显示，在2.8-3.1 GHz载波的1MHz偏移时，相位噪声为-123 dBc/Hz，其品质因数为183 dBc/Hz。所得的理论公式、光谱模拟和测量结果之间有很好的一致性。

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Phase noise analysis and design of a 3-GHz bipolar differential colpitts VCO

This paper presents a low-phase-noise differential bipolar Colpitts VCO, implemented in a 0.35/spl mu/m BiCMOS process. A time-variant phase noise analysis yields closed- form symbolic expressions for the dominant noise sources in the 1/f/sup 2/ phase-noise region. Measurements show a phase noise of -123 dBc/Hz at 1MHz offset from a 2.8-3.1 GHz carrier, for a figure-of-merit of 183 dBc/Hz. A very good agreement between the derived theoretical formulas, spectreRF simulations, and measurements is observed.

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Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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