H. Asada, H. Hayama, Y. Nagae, S. Okazaki, Y. Akimoto, T. Saito
{"title":"用新的印刷技术制作精细栅极TFT电路","authors":"H. Asada, H. Hayama, Y. Nagae, S. Okazaki, Y. Akimoto, T. Saito","doi":"10.1109/DISPL.1991.167476","DOIUrl":null,"url":null,"abstract":"Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fine gate TFT circuits fabricated with a new printing technology\",\"authors\":\"H. Asada, H. Hayama, Y. Nagae, S. Okazaki, Y. Akimoto, T. Saito\",\"doi\":\"10.1109/DISPL.1991.167476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<<ETX>>\",\"PeriodicalId\":399708,\"journal\":{\"name\":\"Conference Record of the 1991 International Display Research Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 International Display Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DISPL.1991.167476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 International Display Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DISPL.1991.167476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fine gate TFT circuits fabricated with a new printing technology
Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<>
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