接近多层次NAND闪存存储效率的信息理论边界

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090580

Shu Li, Tong Zhang

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引用次数: 2

摘要

本文运用信息论对NAND闪存存储效率边界进行了制定和估计，结果表明，该理论边界与目前可实现的边界存在较大差距。我们进一步提出了两种技术来缩小差距，并展示了它们的潜力，使用2位/单元NAND闪存作为测试载体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Approaching the Information Theoretical Bound of Multi-Level NAND Flash Memory Storage Efficiency

This paper applies information theory to formulate and estimate the NAND flash memory storage efficiency bound, and shows a big gap between the theoretical bound and what is achievable today. We further present two techniques to reduce the gap and demonstrate their promising potential using 2 bits/cell NAND flash memories as a test vehicle.

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2009 IEEE International Memory Workshop

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