{"title":"具有信号和瞬态增强的超低电源输出无电容LDO","authors":"Yajun Lin, Haozheng Wan, Jianxin Yang, K. Leung","doi":"10.1109/APCCAS55924.2022.10090352","DOIUrl":null,"url":null,"abstract":"An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.","PeriodicalId":243739,"journal":{"name":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"54 15","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Ultra-Low-Supply Output-Capacitorless LDO with Signal- and Transient-Enhancement\",\"authors\":\"Yajun Lin, Haozheng Wan, Jianxin Yang, K. Leung\",\"doi\":\"10.1109/APCCAS55924.2022.10090352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.\",\"PeriodicalId\":243739,\"journal\":{\"name\":\"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":\"54 15\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS55924.2022.10090352\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS55924.2022.10090352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Low-Supply Output-Capacitorless LDO with Signal- and Transient-Enhancement
An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.