{"title":"基于大页面的ssd中集成的子页面感知写入方法","authors":"Chin-Hsien Wu, Chian-Shiang Ou Yang","doi":"10.1109/NVMSA56066.2022.00018","DOIUrl":null,"url":null,"abstract":"Solid-state drives (SSDs) that adopt NAND flash memory have become one of the most popular storages. With the progress of the manufacturing process, a page size of NAND flash memory has increased from 512B to 16KB recently. However, an I/O request of current file systems could be based on a 4KB sector. Due to the difference between the 16KB page and the 4KB sector, there will be subpage writes in the NAND flash memory. In the paper, we will propose an integrated subpage-aware write method to solve the incompleteness of the previous studies and reduce the overhead of subpage writes.","PeriodicalId":185204,"journal":{"name":"2022 IEEE 11th Non-Volatile Memory Systems and Applications Symposium (NVMSA)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Integrated Subpage-aware Write Method in Large-Page-based SSDs\",\"authors\":\"Chin-Hsien Wu, Chian-Shiang Ou Yang\",\"doi\":\"10.1109/NVMSA56066.2022.00018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solid-state drives (SSDs) that adopt NAND flash memory have become one of the most popular storages. With the progress of the manufacturing process, a page size of NAND flash memory has increased from 512B to 16KB recently. However, an I/O request of current file systems could be based on a 4KB sector. Due to the difference between the 16KB page and the 4KB sector, there will be subpage writes in the NAND flash memory. In the paper, we will propose an integrated subpage-aware write method to solve the incompleteness of the previous studies and reduce the overhead of subpage writes.\",\"PeriodicalId\":185204,\"journal\":{\"name\":\"2022 IEEE 11th Non-Volatile Memory Systems and Applications Symposium (NVMSA)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 11th Non-Volatile Memory Systems and Applications Symposium (NVMSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMSA56066.2022.00018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 11th Non-Volatile Memory Systems and Applications Symposium (NVMSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMSA56066.2022.00018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Integrated Subpage-aware Write Method in Large-Page-based SSDs
Solid-state drives (SSDs) that adopt NAND flash memory have become one of the most popular storages. With the progress of the manufacturing process, a page size of NAND flash memory has increased from 512B to 16KB recently. However, an I/O request of current file systems could be based on a 4KB sector. Due to the difference between the 16KB page and the 4KB sector, there will be subpage writes in the NAND flash memory. In the paper, we will propose an integrated subpage-aware write method to solve the incompleteness of the previous studies and reduce the overhead of subpage writes.
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