Z-RAM®90nm及以下超致密内存

2006 IEEE Hot Chips 18 Symposium (HCS) Pub Date : 2006-08-01 DOI:10.1109/HOTCHIPS.2006.7477748

D. Fisch, Anant Singh, Greg Popov

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引用次数: 1

摘要

本文由作者在Innovative Silicon的Z-RAM(一种超致密内存处理器)会议上的演讲幻灯片组成。讨论的一些具体主题包括:设备及其系统架构的概述;主要的处理挑战;以及关键的Z-RAM性能因素，包括内存密度、处理速度、管道操作、路由影响、有功功率能力和备用电源设施。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Z-RAM® ultra-dense memory for 90nm and below

This article consists of a collection of slides from the author's conference presentation on Innovative Silicon's Z-RAM, an ultra-dense memory processor. Some of the specific topics discussed include: an overview of the device and its system architecture; major processing challenges; and key Z-RAM performance factors, including memory density, speed processing, pipeline operations, routing impact, active power capabilities, and standby power facilities.

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2006 IEEE Hot Chips 18 Symposium (HCS)

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