{"title":"3D双λ二极管VLSI SRAM单元","authors":"G. McGonigal, M. Elmasry","doi":"10.1109/ESSCIRC.1988.5468425","DOIUrl":null,"url":null,"abstract":"A three-dimensional (3D) implementation of the double-lambda-diode SRAM cell is proposed. It is shown that this cell provides greater noise immunity, but requires approximately the same area, as the conventional resistive-load cell.","PeriodicalId":197244,"journal":{"name":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D Double-Lambda-Diode VLSI SRAM Cells\",\"authors\":\"G. McGonigal, M. Elmasry\",\"doi\":\"10.1109/ESSCIRC.1988.5468425\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-dimensional (3D) implementation of the double-lambda-diode SRAM cell is proposed. It is shown that this cell provides greater noise immunity, but requires approximately the same area, as the conventional resistive-load cell.\",\"PeriodicalId\":197244,\"journal\":{\"name\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1988.5468425\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '88: Fourteenth European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1988.5468425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A three-dimensional (3D) implementation of the double-lambda-diode SRAM cell is proposed. It is shown that this cell provides greater noise immunity, but requires approximately the same area, as the conventional resistive-load cell.
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