1.2V, 10.8mW, 500kHz Sigma-Delta调制器,SNDR 84dB, SFDR 96dB

C. Tsang, Y. Chiu, B. Nikolić
{"title":"1.2V, 10.8mW, 500kHz Sigma-Delta调制器,SNDR 84dB, SFDR 96dB","authors":"C. Tsang, Y. Chiu, B. Nikolić","doi":"10.1109/VLSIC.2006.1705360","DOIUrl":null,"url":null,"abstract":"A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 1.2V, 10.8mW, 500kHz Sigma-Delta Modulator with 84dB SNDR and 96dB SFDR\",\"authors\":\"C. Tsang, Y. Chiu, B. Nikolić\",\"doi\":\"10.1109/VLSIC.2006.1705360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references\",\"PeriodicalId\":366835,\"journal\":{\"name\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2006.1705360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

1.2V开关电容sigma-delta调制器在0.13mum 6M1P通用CMOS工艺下,以1ms /s的速度实现96dB峰值SFDR和84dB峰值SNDR。高线性度是通过使用高增益运算放大器和自举采样开关实现的。时钟频率为64MHz时,不含参考电压,功耗为10.8mW
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.2V, 10.8mW, 500kHz Sigma-Delta Modulator with 84dB SNDR and 96dB SFDR
A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信