{"title":"1.2V, 10.8mW, 500kHz Sigma-Delta调制器,SNDR 84dB, SFDR 96dB","authors":"C. Tsang, Y. Chiu, B. Nikolić","doi":"10.1109/VLSIC.2006.1705360","DOIUrl":null,"url":null,"abstract":"A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references","PeriodicalId":366835,"journal":{"name":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 1.2V, 10.8mW, 500kHz Sigma-Delta Modulator with 84dB SNDR and 96dB SFDR\",\"authors\":\"C. Tsang, Y. Chiu, B. Nikolić\",\"doi\":\"10.1109/VLSIC.2006.1705360\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references\",\"PeriodicalId\":366835,\"journal\":{\"name\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2006.1705360\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2006.1705360","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2V, 10.8mW, 500kHz Sigma-Delta Modulator with 84dB SNDR and 96dB SFDR
A 1.2V switched-capacitor sigma-delta modulator achieves 96dB peak SFDR and 84dB peak SNDR at 1 MS/s in a 0.13mum 6M1P general-purpose CMOS process. The high linearity is achieved by using high-gain op-amps and bootstrapped sampling switches. The power dissipation is 10.8mW at 64MHz clock frequency, excluding the voltage references