{"title":"光束诱导反射(OBIR)扫描的空间分辨率和缺陷对比度","authors":"G. Carver, D. Joy","doi":"10.1364/lmd.1987.wf2","DOIUrl":null,"url":null,"abstract":"There is substantial current interest in developing non-contact, non-destructive probes of semiconductor surfaces.[1] [2] [3] [4] [5] A major reason for this activity is that micro-stuctural flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits.[6] Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1 to 2 microns in size. Thus, a probing system would need to exhibit both high spatial resolution and contrast at defective sites.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Spatial Resolution and Defect Contrast of Optical Beam Induced Reflectance (OBIR) Scans\",\"authors\":\"G. Carver, D. Joy\",\"doi\":\"10.1364/lmd.1987.wf2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is substantial current interest in developing non-contact, non-destructive probes of semiconductor surfaces.[1] [2] [3] [4] [5] A major reason for this activity is that micro-stuctural flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits.[6] Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1 to 2 microns in size. Thus, a probing system would need to exhibit both high spatial resolution and contrast at defective sites.\",\"PeriodicalId\":331014,\"journal\":{\"name\":\"Topical Meeting on Lasers in Materials Diagnostics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Topical Meeting on Lasers in Materials Diagnostics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/lmd.1987.wf2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Topical Meeting on Lasers in Materials Diagnostics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/lmd.1987.wf2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Spatial Resolution and Defect Contrast of Optical Beam Induced Reflectance (OBIR) Scans
There is substantial current interest in developing non-contact, non-destructive probes of semiconductor surfaces.[1] [2] [3] [4] [5] A major reason for this activity is that micro-stuctural flaws near the surface of silicon wafers generally impair the successful manufacture of integrated circuits.[6] Detrimental defects such as stacking faults, dislocations, and metallic precipitates are often 1 to 2 microns in size. Thus, a probing system would need to exhibit both high spatial resolution and contrast at defective sites.