提高坚固型nLDMOS Id-Vd曲线平整度的解决方案

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 2011-05-23 DOI:10.1109/ISPSD.2011.5890825

S. Mouhoubi, F. Bauwens, J. Roig, P. Gassot, P. Moens, M. Tack

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引用次数: 9

摘要

本工作总结了旨在减少/抑制坚固型nLDMOS器件输出特性波动的TCAD仿真结果。结果表明，肿块的起源不是由于双极激活。因此，通过简单的几何参数变化和/或工艺变化，nLDMOS的固有MOS可以在一个允许其Id-Vd平面度大幅改善的制度下驱动，而对sr - vbd权衡的影响有限。

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Solutions to improve flatness of Id-Vd curves of rugged nLDMOS

This work summarizes results of TCAD simulations aiming to reduce/suppress the bump in the output characteristics of rugged nLDMOS devices. It is shown that the origin of the bump is not due to bipolar activation. Thus, by simple variations of the geometrical parameters and/or process variations, the intrinsic MOS of the nLDMOS could be driven in a regime allowing a drastic improvement of its Id-Vd flatness with limited impact on the sRon-Vbd trade-off.

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2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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