闪存NAND器件中辐射性能的结构后果

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115485

D. L. Hansen, R. Hillman, F. Meraz, J. Montoya, G. Williamson

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引用次数: 2

摘要

在闪存NAND器件上进行了单事件效应和总电离剂量测试。本文给出了结果，并分析了纠错架构的后果，考虑到生命周期开始的闪存设备在没有外部压力的情况下容易受到数据损坏的影响。分析表明，由于辐射效应的变化，许多典型的纠错结构可能会失效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Architectural consequences of radiation performance in a flash NAND device

Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may be ineffectual because of the variety of radiation effects.

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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