{"title":"全集成伪差分k波段功率放大器在0.13um标准CMOS","authors":"Pengwei Chen, Jin He, Jiang Luo, Hao Wang, Sheng Chang, Qijun Huang, Hao Yu, Xiao-peng Yu","doi":"10.1109/ISICIR.2016.7829728","DOIUrl":null,"url":null,"abstract":"A K-band power amplifier (PA) module with on-chip input and output matching network was fabricated in standard 130-nm CMOS process with 1.5-V supply voltage. The fully integrated PA module consists of 2-stage pseudo-differential cascode configuration PA and on-chip stacked balun based on transformer. At 26GHz, the PA achieved 18.6-dB small-signal gain, 12.2-dBm saturated output power and 22.4% power added efficiency (PAE). The chip occupies an area of 0.88 × 0.62mm2, including all the dc and RF pads.","PeriodicalId":159343,"journal":{"name":"2016 International Symposium on Integrated Circuits (ISIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS\",\"authors\":\"Pengwei Chen, Jin He, Jiang Luo, Hao Wang, Sheng Chang, Qijun Huang, Hao Yu, Xiao-peng Yu\",\"doi\":\"10.1109/ISICIR.2016.7829728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A K-band power amplifier (PA) module with on-chip input and output matching network was fabricated in standard 130-nm CMOS process with 1.5-V supply voltage. The fully integrated PA module consists of 2-stage pseudo-differential cascode configuration PA and on-chip stacked balun based on transformer. At 26GHz, the PA achieved 18.6-dB small-signal gain, 12.2-dBm saturated output power and 22.4% power added efficiency (PAE). The chip occupies an area of 0.88 × 0.62mm2, including all the dc and RF pads.\",\"PeriodicalId\":159343,\"journal\":{\"name\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on Integrated Circuits (ISIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISICIR.2016.7829728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on Integrated Circuits (ISIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISICIR.2016.7829728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fully integrated pseudo differential K-band power amplifier in 0.13um standard CMOS
A K-band power amplifier (PA) module with on-chip input and output matching network was fabricated in standard 130-nm CMOS process with 1.5-V supply voltage. The fully integrated PA module consists of 2-stage pseudo-differential cascode configuration PA and on-chip stacked balun based on transformer. At 26GHz, the PA achieved 18.6-dB small-signal gain, 12.2-dBm saturated output power and 22.4% power added efficiency (PAE). The chip occupies an area of 0.88 × 0.62mm2, including all the dc and RF pads.
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