一种简单的片上电感参数提取方法

2009 IEEE 8th International Conference on ASIC Pub Date : 2009-12-11 DOI:10.1109/ASICON.2009.5351381

Xiaoming Lu, Jingtian Xi, N. Yan, Hao Min

{"title":"一种简单的片上电感参数提取方法","authors":"Xiaoming Lu, Jingtian Xi, N. Yan, Hao Min","doi":"10.1109/ASICON.2009.5351381","DOIUrl":null,"url":null,"abstract":"In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18um CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.","PeriodicalId":446584,"journal":{"name":"2009 IEEE 8th International Conference on ASIC","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A simple parameter extraction method for on-chip inductors\",\"authors\":\"Xiaoming Lu, Jingtian Xi, N. Yan, Hao Min\",\"doi\":\"10.1109/ASICON.2009.5351381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18um CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.\",\"PeriodicalId\":446584,\"journal\":{\"name\":\"2009 IEEE 8th International Conference on ASIC\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE 8th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON.2009.5351381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE 8th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON.2009.5351381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文提出了一种简单的参数提取方法。该提取方法用于从采用中芯国际0.18um CMOS射频技术制作的片上电感的测量或模拟s参数中提取参数。在较宽的频率范围内，计算结果与实测或模拟数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A simple parameter extraction method for on-chip inductors

In this paper a simple parameter extraction method is proposed. The extraction method is applied to extract parameters from the measured or simulated S-parameters of on-chip inductors fabricated with SMIC 0.18um CMOS RF technology. The result shows a good agreement with the measured or simulated data over a wide frequency range without any optimization.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 IEEE 8th International Conference on ASIC

自引率

0.00%

发文量