S. Murtaza, A. Srinivasan, Y. C. Shih, J. Campbell, B. Streetman, J. Bean, L.I. Peticolas
{"title":"双对称镜和非对称镜","authors":"S. Murtaza, A. Srinivasan, Y. C. Shih, J. Campbell, B. Streetman, J. Bean, L.I. Peticolas","doi":"10.1109/LEOSST.1994.700415","DOIUrl":null,"url":null,"abstract":"We report the successful combination of asymmetric and dual mirror designs to fabricate a strained-layer GeSi/Si Bragg mirror with twin peaks at 632 nm and 780 nm. We also report a dual GaAs/AlAs mirror resonant at 1.3 pm and 1.55 pm that can be used for long-wavelength telecommunication applications.","PeriodicalId":379594,"journal":{"name":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dual Symmetric And Asymmetric Mirrors\",\"authors\":\"S. Murtaza, A. Srinivasan, Y. C. Shih, J. Campbell, B. Streetman, J. Bean, L.I. Peticolas\",\"doi\":\"10.1109/LEOSST.1994.700415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the successful combination of asymmetric and dual mirror designs to fabricate a strained-layer GeSi/Si Bragg mirror with twin peaks at 632 nm and 780 nm. We also report a dual GaAs/AlAs mirror resonant at 1.3 pm and 1.55 pm that can be used for long-wavelength telecommunication applications.\",\"PeriodicalId\":379594,\"journal\":{\"name\":\"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOSST.1994.700415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSST.1994.700415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We report the successful combination of asymmetric and dual mirror designs to fabricate a strained-layer GeSi/Si Bragg mirror with twin peaks at 632 nm and 780 nm. We also report a dual GaAs/AlAs mirror resonant at 1.3 pm and 1.55 pm that can be used for long-wavelength telecommunication applications.