一种用于L-S-C波段个人网络的2V BiCMOS接收芯片

Digest of Technical Papers., Symposium on VLSI Circuits. Pub Date : 1995-06-08 DOI:10.1109/VLSIC.1995.520699

M. Madihian, E. Bak, K. Imai, H. Yoshida, Y. Kinoshita, T. Yamazaki

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引用次数: 2

摘要

本文介绍了一种利用BiCMOS技术开发的个人网络应用接收机芯片的设计和性能结果。该接收器将双极射频放大器、BiCMOS简化Gilbert混频器和NMOS中频放大器集成在一个芯片上，工作在1.8-5.4 GHz频段的2v电压下，总功耗为18mw。最大转换增益、LO-IF和RF-IF隔离度分别为34 dB、40 dB和32 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 2V BiCMOS receiver chip for L-S-C band personal networks

This paper concerns with the design and performance results of a receiver chip developed for personal networks applications utilizing a BiCMOS technology. The receiver, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier, on a single chip, is designed to operate at 2 V over 1.8-5.4 GHz frequency band with a total power dissipation of 18 mW. Maximum conversion gain, LO-IF and RF-IF isolation are, respectively, 34 dB, 40 dB, and 32 dB.

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Digest of Technical Papers., Symposium on VLSI Circuits.

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