{"title":"SI-GaAs中化学计量相关点缺陷的核磁共振表征","authors":"M. Suemitsu, K. Terada, N. Miyamoto","doi":"10.1109/SIM.1992.752715","DOIUrl":null,"url":null,"abstract":"Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"NMR characterization of stoichiometry-related point defects in SI-GaAs\",\"authors\":\"M. Suemitsu, K. Terada, N. Miyamoto\",\"doi\":\"10.1109/SIM.1992.752715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
NMR characterization of stoichiometry-related point defects in SI-GaAs
Nuclear magnetic resonance (NMR) has now become a powerful tool in investigating point defects in semiconductor crystals. By being combined with conventional characterization methods for known defects, it presents knowledge on the concentrations of unknown donors or acceptors. The method has been applied to the studies of intrinsic point defects in undoped, semi-insulating GaAs, where the behavior of intrinsic point defects (a)during the ingot annealing and (b)by the variation in the melt stoichiometry are investigated.
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