未发布CMOS-MEMS rbt的优化

Bichoy Bahr, L. Daniel, D. Weinstein
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引用次数: 5

摘要

在本文中,我们提出了一个基于模型阶降和记忆的MEMS谐振器优化的有效框架,以显着提高计算速度40倍。由于其技术重要性和众多应用,我们考虑了未释放的CMOS谐振体晶体管(rbt)。它们复杂的结构需要计算量大的有限元法(FEM)频域模拟,这阻碍了它们的优化。在这项工作中,数值优化与基于物理的声子晶体(PnC)波导设计相结合,实现了具有破纪录性能的未释放cmos - rbt。优化后的rbt采用IBM 32nm SOI技术制备,在3.252 GHz频率下,f·Q ~ 3.8 × 1013的质量因数为Q ~ 11,620。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization of unreleased CMOS-MEMS RBTs
In this paper, we present an efficient framework for optimization of MEMS resonators based on model order reduction and memoization to significantly speed-up computations 40 x). Owing to their technological importance and numerous applications, unreleased CMOS resonant body transistors (RBTs) are considered. Their intricate structure requires computationally intensive finite element method (FEM) frequency domain simulations, which hinders their optimization. In this work, numerical optimization combined with a physics-based phononic crystal (PnC) waveguide design enables the realization of unreleased CMOS-RBTs with record breaking performance. The optimized RBTs have been fabricated in IBM 32nm SOI technology, demonstrating a quality factor Q ~ 11,620 at 3.252 GHz for an f · Q ~ 3.8 × 1013.
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