嵌入式非易失性存储器在智能社会中的应用前景

T. Yamauchi
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引用次数: 3

摘要

嵌入式Flash (eFlash)被各种应用广泛接受,因为它降低了系统开发、生产和库存的总体成本。eFlash的不断发展,如分栅电荷捕获存储器,满足了汽车应用最严格的质量要求。为了提供更好的生活质量,智能社会将使NV记忆多样化,直到新兴记忆的建立。带有一些附加掩码的附加类型eFlash将取代独立的数据flash,以实现自适应调优和网络安全性。为了实现nv存储器在智能社会中的融合,ReRAM和STT-MRAM等新兴存储器正在不断发展。更小的重写能量和更长的重写周期的优点,可以有助于突出的节能,如正常关闭系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prospect of embedded non-volatile memory in the smart society
Embedded Flash (eFlash) is widely accepted by various applications because of reducing overall costs of system development, production and inventory. Continuous evolution of eFlash such as the split-gate charge-trapping memory has satisfied the most stringent quality requirement for automotive applications. Smart society for offering a better quality of life would diversify NV memory until the establishment of emerging memories. Add-on type eFlash with a few additional masks would replace the stand-alone data flash for adaptive tuning and security over the network. Towards the possible convergence of NV-memory in smart society, emerging memories such as ReRAM and STT-MRAM are progressing. Excellent features of smaller rewrite energy with the extending rewrite cycles could contribute to the outstanding energy saving such as normally-off systems.
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