90nm nfet的低频噪声:热载流子降解和氘效应

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398184

M. Erturk, R. Anna, T. Xia, W. Clark, K.M. Nexvton, J. Pekarik, C. Lamothe, M.R. Lacroix

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引用次数: 1

摘要

我们发现，由于热载流子应力，90 nm非场效应管的低频噪声(LFN)会显著增加。测量结果揭示了线性和饱和操作区域的噪声退化。使用氘处理延缓了噪声的衰减，使噪声寿命提高了20倍以上。

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Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect

We show that the low-frequency noise (LFN) of 90 nm nFETs can increase considerably due to hot-carrier stress. Measurements reveal noise degradation for both linear and saturation regions of operation. The use of deuterium processing retards the noise degradation and improves the noise lifetime by more than 20/spl times/.

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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