基于快速I-V测量的NBTI弛豫行为改进分析

2016 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2016-10-09 DOI:10.1109/IIRW.2016.7904908

D. Nouguier, C. Ndiaye, G. Ghibaudo, X. Federspiel, M. Rafik, D. Roy

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引用次数: 3

摘要

在本文中，我们对不同意法半导体(28nm FDSOI技术和40nm SION或Bulk)技术生产的pet器件上测量的NBTI可恢复元件进行了定性分析。在µs时间尺度下测量直流应力引起的NBTI降解和恢复。我们观察到温度和vgrerecovery依赖于SiON和FDSOI技术的NBTI弛豫的相似性。然后，我们讨论了在松弛早期引起NBTI的一种缺陷类型的性质。

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Improved analysis of NBTI relaxation behavior based on fast I–V measurement

In this paper, we propose a qualitative analysis of NBTI recoverable components measured on pFET devices issued from various ST Microelectronics (28nm FDSOI technology and 40nm SION or Bulk) technologies. NBTI degradation and recovery resulting from DC stress are measured at µs time scale. We observed similarities between temperature and Vgrecovery dependencies on NBTI relaxation of SiON and FDSOI technologies. Then, we discuss the nature of one defect type responsible for the NBTI at early stage of relaxation.

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2016 IEEE International Integrated Reliability Workshop (IIRW)

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