探索CMOS图像传感器的三维集成技术

2013 IEEE 11th International Workshop of Electronics, Control, Measurement, Signals and their application to Mechatronics Pub Date : 2013-06-24 DOI:10.1109/ECMSM.2013.6648935

F. Raymundo, P. Martin-Gonthier, R. Molina, S. Rolando, P. Magnan

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引用次数: 5

摘要

3D制造技术允许微电子电路，如处理器或存储器实现非常高的集成密度。这些技术应用于CMOS图像传感器，使得在不破坏CMOS图像传感器关键参数的情况下实现特定的处理架构成为可能。本文通过一个3D图像传感器的实现来说明这些好处，该传感器在像素级集成了一个低噪声电路和一个模数转换器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Exploring the 3D integration technology for CMOS image sensors

3D fabrication technologies allow microelectronic circuits such as processors or memories to achieve very high integration densities. These technologies applied to CMOS image sensors, make possible the implementation of specific processing architectures without damaging key parameters of CMOS imagers. This paper illustrates these benefits with an implementation of a 3D image sensor integrating at the pixel level a low noise circuit coupled to an analog to digital converter.

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来源期刊

2013 IEEE 11th International Workshop of Electronics, Control, Measurement, Signals and their application to Mechatronics

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