ALD-Al2O3在eFlash技术产品演示中的Inter-Poly介电材料

D. Shum, G. Jaschke, M. Canning, R. Kakoschke, R. Duschl, R. Sikorski, F. Erler, M. Stiftinger, A. Duch, J. Power, G. Tempel, R. Strenz, R. Allinger
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引用次数: 11

摘要

我们提出氧化铝(ai2o3)作为高k Inter-Poly介电介质(IPD),在经过验证的0.13 mum嵌入式Flash (eFlash)技术中。到目前为止,400Kbyte的产品演示器首次展示了完整的功能。采用原子层沉积(ALD)法制备了ai2o3层,系统地研究了前驱体、沉积温度、进料时间、Si含量等参数对产物功能的影响。在整个过程中进行了严格的工业可靠性评估,并显示出良好的保持性和耐久性。结果表明,eFlash产品的ai2o3 IPD准备就绪,没有额外的集成问题或产量下降。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology
We present aluminum oxide (AI 2 O 3 ) as high-k Inter-Poly Dielectric (IPD) in a proven 0.13 mum based embedded Flash (eFlash) technology. Full functionality has been demonstrated from a 400Kbyte product demonstrator for the first time published so far. The AI 2 O 3 layer was formed through Atomic-Layer Deposition (ALD) and the influence of parameters such as precursor, deposition temperature, feed-time and Si content on the product functionality have been determined systematically. Vigorous industrial reliability assessment was conducted throughout and promising retention and endurance have been shown. The results demonstrate AI 2 O 3 IPD readiness for eFlash products without additional integration issues or yield degradation.
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