{"title":"半绝缘InP: Cu的表征","authors":"R. P. Leon, P. Werner, E. Weber","doi":"10.1109/SIM.1992.752711","DOIUrl":null,"url":null,"abstract":"Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characterization of semi-insulating InP: Cu\",\"authors\":\"R. P. Leon, P. Werner, E. Weber\",\"doi\":\"10.1109/SIM.1992.752711\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"196 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752711\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Systematic characterization of InP diffused with Cu have shown that both initially p-type and n-type InP become semi-insulating after Cu diffusion. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. These observations support the supposition that the observed semi-insulating behavior in InP:Cu can be best explained by the buried Schottky barrier model, instead of the commonly observed compensation by deep levels.
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