硫族化合物(Ge33As12Se55)薄膜中的体积相元素

Alexandre Joërg, M. Lequime, J. Lumeau
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引用次数: 0

摘要

介绍了一种基于数字微镜器件的新型曝光装置,在13 μm厚的光敏硫化物层中记录二元体积衍射光学元件。不同的光束变换的例子显示,如转换高斯光束到高阶模式或顶帽光束整形器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Volume phase elements in chalcogenide (Ge33As12Se55) thin films
Recording of binary volumetric diffractive optical elements within a 13 μm thick photosensitive chalcogenide layer using an innovative exposure set-up based on digital micro-mirrors devices is demonstrated. Different examples of beam transformations are shown such as the conversion of Gaussian beam into higher order modes or top-hat beam shapers.
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