掺ce Si 3-xAlxOyN4-y固溶体中的5d-4f辐射跃迁

Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions Pub Date : 2002-07-12 DOI:10.1117/12.475328

B. V. Chernovetz, A. Feopentov, F. F. Grekov, S. B. Mikhrim, A. N. Mishin, Alexander S. Potapov

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引用次数: 1

摘要

首次研究了Ce掺杂Si3-xAlxOyN4-y固溶体的发光特性。由于该体系具有较高的辐射硬度和化学稳定性，研究人员对其进行了研究。Ce掺杂的目的是:1)产生高效的荧光粉，2)用Ce作为对照标记研究宿主基质。

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5d-4f radiative transitions in Ce-doped Si 3-xAlxOyN4-y solid solutions

For the first time the result of luminescent properties investigations of Ce doped Si3-xAlxOyN4-y solid solutions are presented. The interest of the sialon study is due to high radiation hardness and chemical stability of this system. The aims of Ce doping are: 1) the efficient phosphor creation, and 2) the investigation of the host matrix by using Ce as a control mark.

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Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions

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