基于gan的vcsel设计优化

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297223

J. Piprek, Zhanming Li

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引用次数: 0

摘要

我们使用先进的激光仿真软件分析了最近制造的基于电泵氮化镓的垂直腔面发射激光器(VCSELs)的设计。发现厚量子阱允许几乎完全消除内置量子阱的极化场。模拟还揭示了一些性能限制效应，如电流拥挤和电子泄漏。提出并讨论了设计优化方案。

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Design optimization of GaN-based VCSELs

We analyze recently manufactured designs of electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) using advanced laser simulation software. Thick quantum wells are found to allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., current crowding and electron leakage. Design optimization options are proposed and discussed.

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来源期刊

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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