K. G. Laursen, D. Hertling, T. Hodge, S. Bidstrup, P. Kohl
{"title":"用原位共振技术检测薄膜聚合物的高频介电特性","authors":"K. G. Laursen, D. Hertling, T. Hodge, S. Bidstrup, P. Kohl","doi":"10.1109/MCMC.1995.512032","DOIUrl":null,"url":null,"abstract":"Using an on-wafer resonant technique the high frequency dielectric properties of six thin film polymers are measured in the range from 1 GHz to 9 GHz. Comparisons are made between the high frequency and low frequency values of the dielectric constant. The effects of different cure conditions and metallizations are also examined.","PeriodicalId":223500,"journal":{"name":"Proceedings of 1995 IEEE Multi-Chip Module Conference (MCMC-95)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Examination of high frequency dielectric properties of thin film polymers using an in-situ resonant technique\",\"authors\":\"K. G. Laursen, D. Hertling, T. Hodge, S. Bidstrup, P. Kohl\",\"doi\":\"10.1109/MCMC.1995.512032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using an on-wafer resonant technique the high frequency dielectric properties of six thin film polymers are measured in the range from 1 GHz to 9 GHz. Comparisons are made between the high frequency and low frequency values of the dielectric constant. The effects of different cure conditions and metallizations are also examined.\",\"PeriodicalId\":223500,\"journal\":{\"name\":\"Proceedings of 1995 IEEE Multi-Chip Module Conference (MCMC-95)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 IEEE Multi-Chip Module Conference (MCMC-95)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCMC.1995.512032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 IEEE Multi-Chip Module Conference (MCMC-95)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1995.512032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Examination of high frequency dielectric properties of thin film polymers using an in-situ resonant technique
Using an on-wafer resonant technique the high frequency dielectric properties of six thin film polymers are measured in the range from 1 GHz to 9 GHz. Comparisons are made between the high frequency and low frequency values of the dielectric constant. The effects of different cure conditions and metallizations are also examined.