用于选择性变化驱动(SCD)电路的先进巨磁电阻(GMR)传感器

Càndid Reig, F. Pardo, J. Boluda, F. Vegara, M. Cubells-Beltrán, Javio Sanchis, S. Abrunhosa, S. Cardoso
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引用次数: 2

摘要

如今,生物灵感正在推动新型传感器的设计,而不仅仅是视觉传感器。利用其与标准CMOS技术的兼容性,提出了在这些事件驱动方法中集成基于巨磁电阻(GMR)的磁传感器。为此,已经设计、制造和表征了几种GMR传感器的拓扑结构。此外,还提出了一种标准CMOS技术的集成电路接口。然后通过Cadence IC模拟证明了它们对这种方法的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits
Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.
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