Càndid Reig, F. Pardo, J. Boluda, F. Vegara, M. Cubells-Beltrán, Javio Sanchis, S. Abrunhosa, S. Cardoso
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Advanced Giant Magnetoresistance (GMR) sensors for Selective-Change Driven (SCD) circuits
Nowadays, bio-inspiration is driving novel sensors designs, beyond vision sensors. By taking advantage of their compatibility with standard CMOS technologies, the integration of giant magneto-resistance (GMR) based magnetic sensors within such event-driven approaches is proposed. With this aim, several topologies of such GMR sensors have been designed, fabricated and characterized. In addition, integrated circuit interfaces of a standard CMOS technology are also proposed. Their suitability for this approach is then demonstrated by means of Cadence IC simulations.