不同材料的接触电阻:大块触点和薄膜触点

Peng Zhang, Y. Lau, W. Tang, M. Gomez, D. French, J. Zier, R. Gilgenbach
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引用次数: 8

摘要

接触电阻对于集成电路和薄膜器件、基于碳纳米管的阴极和互连、场发射器、线阵z-夹脚、金属-绝缘体-真空结和高功率微波源等都是重要的。在其他应用中,电触点由几微米厚度的薄膜结构形成,例如在微机电系统(MEMS)继电器和微连接器系统中。本文总结了密歇根大学最近的建模工作,解决了不同材料和有限尺寸对体触点和薄膜触点接触电阻的影响。分析了直角几何和圆柱几何。在较大的宽高比和电阻率范围内,为块触点和薄膜触点的接触电阻建立了精确的解析标度律。通过数值模拟对已知的极限情况和抽查进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Contact Resistance with Dissimilar Materials: Bulk Contacts and Thin Film Contacts
Contact resistance is important to integrated circuits and thin film devices, carbon nanotube based cathodes and interconnects, field emitters, wire-array z-pinches, metal-insulator-vacuum junctions, and high power microwave sources, etc. In other applications, the electrical contacts are formed by thin film structures of a few microns thickness, such as in micro-electromechanical system (MEMS) relays and microconnector systems. This paper summarizes the recent modeling efforts at the University of Michigan, addressing the effect of dissimilar materials and of finite dimensions on the contact resistance of both bulk contacts and thin film contacts. The Cartesian and cylindrical geometries are analyzed. Accurate analytical scaling laws are constructed for the contact resistance of both bulk contacts and thin film contacts over a large range of aspect ratios and resistivity ratios. These were validated against known limiting cases and spot-checks with numerical simulations.
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