接近个位数节点的设计和技术协同优化

L. Liebmann, R. Topaloglu
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引用次数: 9

摘要

当我们接近个位数节点时,传统的可制造性设计通过设计-技术协同优化(DTCO)、系统良率限制优化(SYLO)和设计重定向等几种方法和设计范式得到增强。我们将讨论三重模式和基于间隔的多重模式以及它们的设计含义,因为这些技术对于我们到达个位数节点是必要的。在DTCO的帮助下,无论是否使用极端紫外线光刻技术,似乎都有一条通向低于10nm的清晰道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and technology co-optimization near single-digit nodes
As we approach single-digit nodes, traditional design for manufacturability is augmented through several methodologies and design paradigms such as design-technology co-optimization (DTCO), systematic yield limiters optimization (SYLO), and design retargeting. We discuss triple-patterning and spacer-based multiple patterning and their design implications as these technologies will be necessary to cruise us to single-digit nodes. With the help of DTCO, there seems to be a clear path to sub-10nm with or without extreme ultra-violet lithography.
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