DPL模型对电子器件传热的适用范围

M. Zubert, T. Raszkowski, A. Samson, M. Janicki, A. Napieralski
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引用次数: 2

摘要

本文介绍了双相位滞后模型在现代电子结构中的适用范围。此外,本文还对该模型代替传统的基于傅里叶-基尔霍夫模型的传热建模方法的强制性应用进行了研究。此外,还考虑了包含特殊滞后参数的改进傅里叶-基尔霍夫热模型。为了得到上述热模型的适用范围,分析了三种不同的经典功率晶体管,即单极、双极和绝缘栅双极晶体管(IGBT)。对收到的仿真结果进行了详细的比较和分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The scope of applicability of DPL model to the heat transfer in electron devices
This paper presents the scope of applicability of Dual-Phase-Lag model in modern electronic structures. Moreover, the investigation of obligatory application of this model, instead of the classical approach based on Fourier-Kirchhoff model, to heat transfer modeling is included. Furthermore, the modified Fourier-Kirchhoff thermal model, containing the special time lag parameter, is also taken into consideration. In order to obtain the mentioned scope of applicability both analyzed thermal model, the three different classical power transistors i.e. unipolar, bipolar and insulated gate bipolar transistors (IGBT), have been considered. The received simulation results have been carefully compared and analyzed in detail.
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