GaAs-AlGaAs量子霍尔器件交流纵向电阻的测量

1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254) Pub Date : 1998-07-06 DOI:10.1109/CPEM.1998.700012

F. Cabiati, L. Callegaro, C. Cassiago, V. D’Elia, G. Marullo-Reedtz

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引用次数: 13

摘要

利用改进的测量系统和一种新的方法，在160 Hz到16 kHz的频率范围内对量子霍尔器件的交流纵向电阻R/sub x/进行了测量。结果表明，R/sub x/最小值与磁感应强度呈线性关系，与频率呈非对称关系。

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Measurements of the AC longitudinal resistance of a GaAs-AlGaAs quantum Hall device

Measurements of the AC longitudinal resistance R/sub x/ of a quantum Hall device have been carried out at frequencies from 160 Hz to 16 kHz, with an improved measuring system and a new procedure for rejecting the quadrature component due to stray capacitance. The results show a linear dependence on frequency and an asymmetric shape of the R/sub x/ minimum versus magnetic induction.

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来源期刊

1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254)

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