Performance Analysis of a Novel Dual Metal Strip Charge Plasma Tunnel FET

Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity are the prerequisite for FET's to make better Analog/RF circuit applications. So, this paper describes a novel structure of a charge plasma Tunnel FET which consists of a dual metal strip implanted in the oxide region at source-channel (S/C) and drain-channel (D/C) interfaces to improve the current driving capability and to lower the ambi-polar behavior respectively. The metal strip implanted controls the lateral band-to-band tunneling, resulting in tunneling of more charge carriers at the S/C junction which further provides enhanced current driving capacity for device. At D/C junction, it widens the energy bands resulting in reduced ambipolarity. To get the desired results from the device, variation of energy bands is studied for the conventional and proposed device under different biases. Also, RF parameters are studied for the applicability of device at high frequency.