膜技术中的超快光与超结器件

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488002

F. Udrea, T. Trajkovic, C. Lee, D. Garner, X. Yuan, J. Joyce, N. Udugampola, G. Bonnet, D. Coulson, R. Jacques, M. Izmajlowicz, N. van der Duijn Schouten, Z. Ansari, P. Moyse, G. Amaratunga

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引用次数: 34

摘要

Udrea和Amararunga(2004)首先提出了在SOI功率器件的部分漂移区域下对整个硅衬底进行背面蚀刻，Udrea等人(2005)也进行了实验报道。这种技术概念使高压器件能够嵌入薄硅/氧化膜中，从而大大提高了击穿能力和开关速度。本文介绍了先进的薄膜高功率器件和全功能功率集成电路的新成果。此外，记录的交换速度的光被报道。利用该技术实现击穿能力超过700V的超结结构(3D Resurf)的可行性也得到了证明

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Ultra-fast LIGBTs and superjunction devices in membrane technology

Back-side etching of the entire silicon substrate under part of the drift region of a SOI power device was first proposed by Udrea and Amararunga (2004) and experimentally reported by Udrea et al. (2005). This technology concept enables high voltage devices to be embedded in a thin silicon/oxide membrane resulting in very significant improvements in breakdown ability and switching speed. This paper presents new results from advanced membrane high power devices and fully functional power ICs. Furthermore, record switching speeds for the LIGBT are reported. The feasibility of realising superjunction structures (3D Resurf) with breakdown capability in excess of 700V using this technology are also demonstrated

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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