未来亚半微米ULSI器件的晶圆质量规范

1992 Symposium on VLSI Technology Digest of Technical Papers Pub Date : 1992-06-02 DOI:10.1109/VLSIT.1992.200626

T. Ohmi, J. Takano, T. Tsuga, M. Kogure, S. Aoyama, K. Matsumoto, Kanjuro MAKIHARA

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引用次数: 4

摘要

指出晶片质量对极薄氧化膜的表面显微硬度有严格的影响。在某些工艺中，表面显微硬度的提高与硅片中硅空位团簇的浓度密切相关。具有低硅空位浓度的外延片对于亚半微米ULSI器件是优越的。

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Wafer quality specification for future sub-half-micron ULSI devices

It is pointed out that the surface microhardness dominating the electrical properties of very thin oxide films is strictly influenced by the wafer quality. The increase of the surface microhardness in some processes is shown to depend strongly on the silicon vacancy cluster concentration in the wafer. An epitaxial wafer having low silicon vacancy concentration is superior for sub-half-micron ULSI devices.<>

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1992 Symposium on VLSI Technology Digest of Technical Papers

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