M. Sakamoto, Kenichi Nakadozono, K. Iwanabe, T. Asano
{"title":"200℃下超声焊线焊垫下应变分布的时间演化","authors":"M. Sakamoto, Kenichi Nakadozono, K. Iwanabe, T. Asano","doi":"10.1109/ICSJ.2017.8240137","DOIUrl":null,"url":null,"abstract":"Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.","PeriodicalId":225668,"journal":{"name":"2017 IEEE CPMT Symposium Japan (ICSJ)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C\",\"authors\":\"M. Sakamoto, Kenichi Nakadozono, K. Iwanabe, T. Asano\",\"doi\":\"10.1109/ICSJ.2017.8240137\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.\",\"PeriodicalId\":225668,\"journal\":{\"name\":\"2017 IEEE CPMT Symposium Japan (ICSJ)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE CPMT Symposium Japan (ICSJ)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSJ.2017.8240137\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE CPMT Symposium Japan (ICSJ)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2017.8240137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Time evolution of strain distribution under bonding pad during ultrasonic wire-bonding at 200°C
Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic vibration. Visualization of the average strain clearly indicated that concentration of strain in the device layer at the positon over which the end of capillary was present was reduced. Therefore, elevating substrate temperature may reduce generation of damage in the device layer. It was also found that elevating substrate temperature reduced the residual strain in the device layer.
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