超快速正栅偏置应力(<100ns)理解功率p-GaN hemt的空穴注入

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147734

Zhen-Hong Huang, Wei-Syuan Lin, T. Lo, Shun-Wei Tang, Szu-Chia Chen, D. Wellekens, M. Borga, N. Posthuma, B. Bakeroot, S. Decoutere, Tian-Li Wu

{"title":"超快速正栅偏置应力(<100ns)理解功率p-GaN hemt的空穴注入","authors":"Zhen-Hong Huang, Wei-Syuan Lin, T. Lo, Shun-Wei Tang, Szu-Chia Chen, D. Wellekens, M. Borga, N. Posthuma, B. Bakeroot, S. Decoutere, Tian-Li Wu","doi":"10.1109/ISPSD57135.2023.10147734","DOIUrl":null,"url":null,"abstract":"Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs\",\"authors\":\"Zhen-Hong Huang, Wei-Syuan Lin, T. Lo, Shun-Wei Tang, Szu-Chia Chen, D. Wellekens, M. Borga, N. Posthuma, B. Bakeroot, S. Decoutere, Tian-Li Wu\",\"doi\":\"10.1109/ISPSD57135.2023.10147734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.\",\"PeriodicalId\":344266,\"journal\":{\"name\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD57135.2023.10147734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文首次报道了p-GaN hemt中的超快速正栅极偏置应力(<100ns)，用于研究功率p-GaN hemt中的空穴注入/捕获现象，包括来自时间相关TCAD模拟的分析。结果表明，在超快正栅极偏压下，由空穴注入和捕获引起的负阈值电压(VTH)偏移可以最小化，这表明p-GaN功率hemt有望实现不受PBTI不稳定性影响的快速导通操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

Ultra-fast positive gate bias stress (<100ns) in p-GaN HEMTs is reported for the first time to investigate the hole injection/trapping phenomena in power p-GaN HEMTs, including the analysis from the time-dependent TCAD simulations. The results indicate that the negative threshold voltage (VTH) shift caused by the hole injection and trapping can be minimized under the ultra-fast positive gate bias, suggesting that p-GaN power HEMTs are promising for the fast turn-on operation that can be immune to PBTI instability.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

自引率

0.00%

发文量